场效应管IRFR4620TRLPBF

IRFR4620TRLPBF进口原装，欢迎来电咨询洽谈订购！

Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dV/dT Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *

Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.

VDSS 200V
RDS(on) typ. 64m􀀀
max. 78m􀀀
ID 24A